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    NXP Semiconductors BYC10-600 Hyperfast power diode BYC10-600 All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2013. All rights reserved Product data sheet 27 May 2013 4 / 9 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics IF = 10 A; T j = 25 °C; Fig. 4 - 2 2.9 V IF = 10 A; T j = 150 °C; Fig. 4 - 1.4 1.8 V VF forward voltage IF = 20 A; T j = 150 °C; Fig. 4 - 1.7 2.3 V VR = 600 V; T j = 25 °C; Fig. 5 - 9 200 μA IR reverse current VR = 500 V; T j = 100 °C; Fig. 5 - 1.1 3 mA Dynamic characteristics IF = 1 A; V R = 30 V; dI F/dt = 50 A/μs; Tj = 25 °C; Fig. 6 - 35 55 ns IF = 10 A; V R = 400 V; dI F/dt = 500 A/ μs; Tj = 25 °C; Fig. 6 - 19 - ns trr reverse recovery time IF = 10 A; V R = 400 V; dI F/dt = 500 A/ μs; Tj = 100 °C; Fig. 6 - 32 40 ns IF = 10 A; V R = 400 V; dI F/dt = 100 A/ μs; Tj = 125 °C; Fig. 6 - 3 7.5 A IRM peak reverse recovery current IF = 10 A; V R = 400 V; dI F/dt = 500 A/ μs; Tj = 125 °C; Fig. 6 - 9.5 12 A VFRM forward recovery voltage IF = 10 A; dI F/dt = 100 A/μs; T j = 25 °C; Fig. 7 - 8 11 V |